Plasma-Assisted Nanofabrication of
Two-dimensional Metal Chalcogenide Layers
Rachel M. Morrish and Colin A. Wolden
Summary: Low-temperature plasma-assisted methods to produce two-dimensional metal
dichalcogenide layers
Description: Two dimensional (2D) metal dichalcogenides (e.g., WS2, MoS2, etc.) are
molecularly thin sheets that have extraordinary optical properties, catalytic performance, and
electronic structure. The synthesis of 2D dichalcogenides commonly employs exposure of
transition metal precursors, typically oxides, to elemental chalcogen vapor at extremely high
temperatures (>800 C). Because of the high temperature requirement, the number of viable
substrates is limited and the cost is prohibitive for large scale production. This invention relates
to two plasma-assisted methods for producing metal chalcogen at lower temperatures.
Furthermore, one of the methods allows for the metal chalcogen layers to be applied to
substrates such that the thickness of the layers is controlled. The methods accelerate the
fabrication and deployment of 2D metal dichalcogenides and related devices.
Main Advantages of this Invention
 Lower production costs
 Amenable to high volume manufacturing
 Manufactured at lower temperatures
 Self-limiting deposition
Potential Areas of Application
 Optoelectronics
 Semiconductors
ID number: 14008
Intel ectual Property Status: US utility patent pending (application #14/524,649)
Publications: (1) Chem. Mater. 2014, 26, 2986. (2) Chem. Phys. Lett. 2014, 615, 6. (Available
upon request.)
Opportunity: We are seeking an exclusive or non-exclusive licensee for the implementation of
this technology.
For more information contact:
William Vaughan, Director of Technology Transfer
Colorado School of Mines, 1500 Illinois Street, Guggenheim Hall Suite 314, Golden, CO 80401
Phone: 303-384-2555; e-mail: