Rapid Reduction of Sodium Occupancy in Type I Silicon
Clathrate by Chemical Etching
Lakshmi Krishna, Eric Toberer, and Adele Tamboli
Summary: A method to reduce the sodium occupancy in type I silicon clathrate
Description: A chemical etching technique is used to reduce the sodium
occupancy in type I silicon clathrate. This technique is efficient at rapid removal
of sodium, compared to the traditional method where the sodium containing
silicon clathrate is annealed for several days. Additionally, the chemical etching
process preferably etches type I clathrate. Since type I clathrate synthesis mostly
results in less than 5 wt.% type I impurity phase, the chemical etch technique
serves to eliminate the type I phase. This rapid removal of sodium by chemical
etching is important for synthesizing phase pure semiconducting clathrates.
Main Advantages of this Invention:
 Selectively etch type I silicone clathrate
Potential Areas of Application:
 Semiconductors
ID number: 14019
Intel ectual Property Status: US utility patent pending (application #14/612,002)
Opportunity: We are seeking an exclusive or non-exclusive licensee for the
implementation of this technology.
For more information contact:
William Vaughan, Director of Technology Transfer
Colorado School of Mines, 1500 Illinois Street, Guggenheim Hall Suite 314, Golden, CO 80401
Phone: 303-384-2555; e-mail: wvaughan@mines.edu