Investigations of ISSG processing for advanced oxidation
This project centers on experimental and modeling investigations of the in-situ steam generation (ISSG) process used for silicon oxidation. Instead of using O2 or water as the oxidant, premixed hydrogen and oxygen are supplied to the chamber. Low pressure combustion is initiated by the hot wafer, forming radicals such as O atoms which enhance the oxidation rate and can lead to improved dielectric properties.
Research at CSM has three major aspects:
Chemically reacting flow modeling to support reactor design and control.
Experimental oxidation and evaluation of dielectric properties.
Molecular beam mass spectometry for analysis fo the process.
This collaborative rpoject is managed with Professors Tom McKinnon & Bob Kee in CSM's Engineering Division. Brent Lutz is an undergraduate researcher working on this project.
This project is supported by Applied Materials.