Synthesis of Advanced Dielectrics using HVP-CVD

The picture at right shows a novel inductively-couple plasma (ICP) source that is central to a process we call high vacuum plasma-assisted chemical vapor deposition (HVP-CVD). The goals of this project are twofold. First, we want to develop an improved  understanding of the deposition chemistry through a combination of extensive diagnostics and detailed modeling. Second, we are applying this novel reactor configuration to the synthesis of high performance dielectrics. These are of particular interest to overcoming fundamental limits in silicon process scaling for  CMOS and DRAM technology.  The project currently employs a combined BS/MS candidate Scott Szymanski and undergraduate Alex Monson.

Support for this project is being provided by the National Science Foundation's Division of Chemical and Transport Systems through Career Award #0093611and an associated REU supplement.