Current Processing Techniques
- RF Magnetron Sputtering
- Key is fabrication of the target
- Reactive sputtering: Metal target, O2 Ambient
- Requires high temperature anneal (> 400 ºC)
- High vacuum process ~10-4 torr
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- Atmospheric Pressure CVD
- High substrate temperature, high throughput
- Requires volatile precursor, limited to tin oxide
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- Spray Pyrolysis
- Dissolve precursors in water/alcohol solutions
- Lower quality, uniformity
High Substrate Temperature