PECVD Advantages
- Demonstrated Technology
- Low T Deposition: oxides, nitrides, amorphous silicon
- SiO2: CVD Ts ~800ºC, PECVD Ts ~ 200ºC
- High deposition rate/cost effective/large area uniformity
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- Operating Pressure: 100-1000 mTorr
- Mechanical pumps/higher throughput
- Volatile precursors: SnCl4, Zn(CH3)2, Cd(CH3)2, In(CH3)3
- Oxidizing environment - minimal film contamination
- Exposure minimized, can handle toxic compounds
- Flexibility: alloys, functionally gradient materials
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- SnCl4 Example
- APCVD: Bubblers at 80 ºC, 1 slm N2, heated lines
- PECVD: Room temperature, direct injection, 2 sccm
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